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Electronic Devices and Circuit Theory:: Field-Effect Transistors

1 

In a self-biased JFET circuit, if VD = VDD then ID = ________.

A. 0
B. cannot be determined from information above
2 

What three areas are the drain characteristics of a JFET (VGS = 0) divided into?

A. ohmic, constant-current, breakdown
B. pinch-off, constant-current, avalanche
C ohmic, constant-voltage, breakdown
3 

Which of the following devices has the highest input resistance?

A. diode
B. JFET
C MOSFET
D. bipolar junction transistor
4 

A JFET data sheet specifies VGS(off) = –10 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V.

A. 2 mA
B. 1.4 mA
C 4.8 mA
D. 3.92 mA
5 

A dual-gated MOSFET is

A. a depletion MOSFET.
B. an enhancement MOSFET.
C a VMOSFET.
D. either a depletion or an enhancement MOSFET.
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